2SB1308 transistor (pnp) features power dissipation p cm : 0.5 w (tamb=25 ) collector current i cm : -3 a collector-base voltage v (br)cbo : -30 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo ic=-50 a , i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c = -1ma , i b =0 -20 v emitter-base breakdown voltage v (br)ebo i e =-50 a, i c =0 -6 v collector cut-off current i cbo v cb =-20 v , i e =0 -0.5 a emitter cut-off current i ebo v eb =-5 v , i c =0 -0.5 a dc current gain h fe * v ce =-2v, i c = -0.5a 82 390 collector-emitter saturation voltage v cesat * i c =-1.5a, i b = -0.15a -0.45 v transition frequency f t v ce = -6v, i c =-50ma f =30mhz 50 mhz * measured using pulse current. classification of h fe rank p q r range 82-180 120-270 180-390 marking bfp,bfq,bfr sot-89 1. base 2. collector 3. emitter 1 2 3 2s b1 308 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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